GROWTH OF STRAINED INAS/INP QUANTUM-WELLS BY MOLECULAR-BEAM EPITAXY

InAs/InP compressively strained quantum well structures with well thicknesses (L(Z)) 5 to 53 angstrom have been grown by solid source molecular beam epitaxy. Relatively sharp, intense, photoluminescence (PL) is observed over the wavelength range 1.1-2.05-mu-m at 10 K, with linewidths as narrow as 14 meV for a 30 angstrom well. Quantum confinement results in a shift of PL peak position of 130-710 meV with respect to the band gap of bulk strained InAs. The shifts are consistent with a conduction band offset (DELTA-E(c)) of 40%. At 300 K the wavelength range is extended to 2.23-mu-m, a value which to our knowledge is the longest wavelength reported for InAs/InP quantum wells. The high quality of pseudomorphic structures with well thicknesses exceeding estimates of critical layer thickness is demonstrated by transmission electron microscopy studies.