RELAXATION OF STRAIN WITHIN MULTILAYER INGAAS/GAAS PSEUDOMORPHIC STRUCTURES

被引：28

作者：

GREY, R

DAVID, JPR

CLAXTON, PA

SANZ, FG

WOODHEAD, J

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 02期

关键词：

D O I：

10.1063/1.343478

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：975 / 977

页数：3

共 15 条

[1]

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[6] PHOTOLUMINESCENCE IN STRAINED INGAAS-GAAS HETEROSTRUCTURES [J].

GAL, M ;

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APPLIED PHYSICS LETTERS, 1988, 52 (05) :377-379

[8] GENERATION OF MISFIT DISLOCATIONS IN SEMICONDUCTORS [J].

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[9]

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[10] DETERMINATION OF CRITICAL LAYER THICKNESS IN INXGA1-XAS GAAS HETEROSTRUCTURES BY X-RAY-DIFFRACTION [J].

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APPLIED PHYSICS LETTERS, 1987, 50 (15) :980-982

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