ALL-SOLID SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF 1.35 MU-M WAVELENGTH STRAINED-LAYER GALNASP QUANTUM-WELL LASER

被引：29

作者：

TOIVONEN, M ^{[1
]}

SALOKATVE, A ^{[1
]}

JALONEN, M ^{[1
]}

NAPPI, J ^{[1
]}

ASONEN, H ^{[1
]}

PESSA, M ^{[1
]}

MURISON, R ^{[1
]}

机构：

[1] EG&G OPTOELECTR CANADA,VAUDREUIL,PQ J7V 8P7,CANADA

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 10期

关键词：

MOLECULAR BEAM EPITAXIAL GROWTH; SEMICONDUCTOR JUNCTION LASERS; SEMICONDUCTOR QUANTUM WELLS;

D O I：

10.1049/el:19950526

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first GaInAsP based laser diode grown by ail solid source molecular beam epitaxy is reported. A strained-layer GaInAsP/InP separate confinement heterostructure multiquantum well laser emitting at 1.35 mu m was prepared. A low threshold current density of 510 A/cm(2) was obtained for a broad-area laser having a cavity length of 1300 mu m.

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页码：797 / 799

页数：3

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