LOW-THRESHOLD 1.3-MU-M WAVELENGTH, INGAASP STRAINED-LAYER MULTIPLE-QUANTUM-WELL LASERS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

被引：11

作者：

SHIAU, GJ ^{[1
]}

CHAO, CP ^{[1
]}

BURROWS, PE ^{[1
]}

FORREST, SR ^{[1
]}

机构：

[1] PRINCETON UNIV,ADV TECHNOL CTR PHOTON & OPTOELECTR MAT,DEPT ELECT ENGN,PRINCETON,NJ 08544

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 07期

关键词：

D O I：

10.1063/1.112192

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the growth, by gas source molecular beam epitaxy (GSMBE) of low-threshold 1.3-mum wavelength strained-layer In0.86Ga0.14As0.52P0.48/In0.86Ga0.14A0.3P0.7 separate confinement heterostructure multiple quantum well lasers. Threshold currents as low as 16 mA were measured for a 390 X 5-mum ridge laser, and a threshold current density of J(th) = 490 A/cm2 was achieved for a 1200 X 5-mum device. Apparently, this is the lowest value of J(th) reported to date for 1.3-mum lasers grown by GSMBE, and is comparable to the best devices grown by other techniques such as chemical beam epitaxy and metalorganic vapor phase epitaxy.

引用

页码：892 / 894

页数：3

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