IMPROVED INGAP/GAAS HETEROINTERFACES DURING GAS-SOURCE MBE GROWTH

The conditions for obtaining InGaP/GaAs heterointerfaces which are laterally uniform and atomically abrupt when grown by gas-source MBE are reported. Using in-situ reflection high-energy electron diffraction, double crystal X-ray diffraction, and transmission electron microscopy, the effects of a growth pause on the interfacial structure and composition of lattice-matched InGaP/GaAs multiple quantum well structures were studied. It was found that by providing sufficient time for annealing of the growth surface, interfacial regions which correspond to an intrinsic strain model of ideal InGaP/GaAs heteroepitaxial interfaces could be obtained.