OPERATION AND DEVICE APPLICATIONS OF A VALVED-PHOSPHORUS CRACKER IN SOLID-SOURCE MOLECULAR-BEAM EPITAXY

被引：25

作者：

CHIN, TP

CHANG, JCP

WOODALL, JM

CHEN, WL

HADDAD, GI

PARKS, C

RAMDAS, AK

机构：

[1] UNIV MICHIGAN,DEPT ELECT ENGN & COMP SCI,ANN ARBOR,MI 48109

[2] PURDUE UNIV,DEPT PHYS,W LAFAYETTE,IN 47907

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 02期

关键词：

D O I：

10.1116/1.588154

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Solid phosphorus is successfully incorporated into a molecular-beam epitaxy system by a valved-cracker for the growth of phosphorus-based materials. The operating parameters are established through beam flux and reflection high-energy electron diffraction measurements. InP and InGaP lattice matched to GaAs were grown and characterized by Hall measurements, photoluminescence, electroreflectance, x-ray diffraction, and transmission electron microscopy. The first microwave performance (ft = 44 GHz, fmax = 65 GHz) of an InGaP/GaAs heterojunction bipolar transistor grown by solid-phosphorus source is reported.

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页码：750 / 753

页数：4

相关论文

共 14 条

[1] ELECTRICAL CHARACTERISTICS OF INP GROWN BY MOLECULAR-BEAM EPITAXY USING A VALVED PHOSPHORUS CRACKING CELL [J].

BAILLARGEON, JN ;

CHO, AY ;

FISCHER, RJ ;

PEARAH, PJ ;

CHENG, KY .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (02) :1106-1109

[2] REPRODUCIBILITY STUDIES OF LATTICE-MATCHED GAINASP ON (100) INP GROWN BY MOLECULAR-BEAM EPITAXY USING SOLID PHOSPHORUS [J].

BAILLARGEON, JN ;

CHO, AY ;

THIEL, FA ;

FISCHER, RJ ;

PEARAH, PJ ;

CHENG, KY .

APPLIED PHYSICS LETTERS, 1994, 65 (02) :207-209

[3] DETERMINATION OF V/III RATIOS ON PHOSPHIDE SURFACES DURING GAS SOURCE MOLECULAR-BEAM EPITAXY [J].

CHIN, TP ;

LIANG, BW ;

HOU, HQ ;

HO, MC ;

CHANG, CE ;

TU, CW .

APPLIED PHYSICS LETTERS, 1991, 58 (03) :254-256

[4] ARSENIC STABILIZATION OF INP SUBSTRATES FOR GROWTH OF GAXIN1-XAS LAYERS BY MOLECULAR-BEAM EPITAXY [J].

DAVIES, GJ ;

HECKINGBOTTOM, R ;

OHNO, H ;

WOOD, CEC ;

CALAWA, AR .

APPLIED PHYSICS LETTERS, 1980, 37 (03) :290-292

[5] STABILIZATION OF SURFACES OF III .5. COMPOUND CRYSTALS BY MOLECULAR-BEAMS [J].

FARROW, RFC .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1975, 8 (07) :L87-&

[6] OBSERVATION OF STRONG ORDERING IN GAXIN1-XP ALLOY SEMICONDUCTORS [J].

GOMYO, A ;

SUZUKI, T ;

IIJIMA, S .

PHYSICAL REVIEW LETTERS, 1988, 60 (25) :2645-2648

[7] GROWTH OF HIGH-PURITY INP BY METALORGANIC MBE (CBE) [J].

HEINECKE, H ;

BAUR, B ;

HOGER, R ;

MIKLIS, A .

JOURNAL OF CRYSTAL GROWTH, 1990, 105 (1-4) :143-148

[8]

HOU HQ, 1991, MATER RES SOC S P, V228, P231

[9] HIGH-QUALITY IN0.48GA0.52P GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY [J].

KUO, JM ;

FITZGERALD, EA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02) :959-961

[10] ELECTRONIC BAND-STRUCTURE OF ALGAINP GROWN BY SOLID-SOURCE MOLECULAR-BEAM EPITAXY [J].

MOWBRAY, DJ ;

KOWALSKI, OP ;

HOPKINSON, M ;

SKOLNICK, MS ;

DAVID, JPR .

APPLIED PHYSICS LETTERS, 1994, 65 (02) :213-215