ELECTRONIC BAND-STRUCTURE OF ALGAINP GROWN BY SOLID-SOURCE MOLECULAR-BEAM EPITAXY

被引：57

作者：

MOWBRAY, DJ ^{[2
]}

KOWALSKI, OP

HOPKINSON, M

SKOLNICK, MS

DAVID, JPR

机构：

[1] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SERC,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND

[2] UNIV SHEFFIELD,DEPT PHYS,SHEFFIELD S3 7RH,S YORKSHIRE,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 02期

关键词：

D O I：

10.1063/1.112676

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The compositional dependence of the electronic band structure of (AlxGa1-x)0.52In0.48P lattice matched to GaAs is reported. Epitaxial layers, grown by solid-source molecular-beam epitaxy, with excellent structural and optical quality are obtained over the whole compositional range. Optical spectroscopic techniques are used to study the electronic band structure as a function of composition. The low-temperature, direct excitonic band gap is found to be given by E(g)(x)=1.979+0.704x eV and the lowest band gap becomes indirect for x(c)=0.50+/-0.02. The low-temperature excitonic direct band gap of Al0.52In0.48P is measured to be 2.680 eV

引用

页码：213 / 215

页数：3

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