HIGH-QUALITY IN0.48GA0.52P GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY

We report the growth of high quality In0.48Ga0.52P lattice matched to GaAs substrates by gas source molecular beam epitaxy. A full width at half-maximum (FWHM) of the (004) double crystal x-ray diffraction peak as small as 19 arc sec was measured from a 1.8-mu-m thick epilayer. Such line width is the narrowest reported thus far for any growth technique. Room temperature cathodoluminescence shows a band gap of approximately 1.92 eV and the narrowest measured FWHM is 29 meV. Electron mobilities as high as 3200 and 25 700 cm2/V s have been obtained from Hall measurements at 300 and 77 K, respectively, which are comparable with the highest values ever reported.