Si-based electroluminescence at THz frequencies

被引：28

作者：

Lynch, SA

Dhillon, SS

Bates, R

Paul, DJ

Arnone, DD

Robbins, DJ

Ikonic, Z

Kelsall, RW

Harrison, P

Norris, DJ

Cullis, AG

Pidgeon, CR

Murzyn, P

Loudon, A

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

[2] TeraView Ltd, Cambridge, England

[3] DERA, Great Malvern, England

[4] Univ Leeds, Inst Microwaves & Photon, Leeds, W Yorkshire, England

[5] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

[6] Heriot Watt Univ, Edinburgh EH1 1HX, Midlothian, Scotland

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2002年 / 89卷 / 1-3期

关键词：

silicon; germanium; quantum effects; luminescence;

D O I：

10.1016/S0921-5107(01)00782-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Experimental results of electroluminescence in the terahertz gap. at 6 THz (or 40 mum) from Si/SiGe multi quantum well structures, grown by a commercial chemical vapour deposition system are presented. Theoretical simulations were used to design the heterolayer structure and to explain the emission and absorption features. Electrical and materials characterisation is also presented to demonstrate the quality of the heterolayers. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：10 / 12

页数：3

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