Si1-xGex pulsed plasma etching using CHF3 and H-2

被引：16

作者：

Paul, DJ

Law, VJ

Jones, GAC

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 06期

关键词：

D O I：

10.1116/1.588055

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Selective reactive ion etching of Si over Si1-xGex and Si1-xGex over Si has been demonstrated by using a modulation-frequency plasma-etch technique which employs CHF3 and H-2 as the etch precursor gases. The selective etch crossover region appears at a modulation frequency of 2-3 Hz for a duty cycle of 50%. It is suggested that the etch selectivity phenomenon arises from the relative ion-assisted and purely chemical compounds of the radio frequency plasma and decaying plasma afterglow. (C) 1995 American Vacuum Society.

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页码：2234 / 2237

页数：4

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