300-KHZ PULSE PLASMA-ETCHING OF GAAS USING A MIXTURE OF CICH3 AND H2

被引：4

作者：

LAW, VJ ^{[1
]}

TEWORDT, M ^{[1
]}

CLARY, DC ^{[1
]}

JONES, GAC ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,DEPT CHEM,CAMBRIDGE CB2 1EW,ENGLAND

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 06期

关键词：

D O I：

10.1116/1.586886

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new process for low-frequency (300 kHz) pulse plasma etching of GaAs and mask materials (Au, Cu, and Ni) using a mixture of ClCH3 and H-2 in the pressure range of 40-80 mTorr is reported. The ion-bombardment r(i) and chemical component r(c) of the etch rate are deconvolved by measuring the GaAs etch rate as a function of pulse width, duty cycle, pressure, and etch time constant t1/2. The etch rate is modeled using a phenomenological rate equation with fitting parameters: t1/2, r(i), and r(c).

引用

页码：2262 / 2265

页数：4

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