THE APPLICATION OF THE HELICON SOURCE TO PLASMA PROCESSING

被引：243

作者：

PERRY, AJ

VENDER, D

BOSWELL, RW

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 02期

关键词：

D O I：

10.1116/1.585611

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The results of a study of the mode transitions in the helicon source when used in the geometry required for plasma processing are presented. We find that the basic characteristics of high density (> 5 X 10(11) cm-3 in the processing chamber at 500 W) and low plasma potential (approximately 15 V) are observed in this configuration. The mode transitions can be interpreted in terms of the dispersion relation for the helicon wave. A study of the initial plasma breakdown has also been made and the results have aided in the understanding of the operation of the helicon source during pulsed plasma etching.

引用

页码：310 / 317

页数：8

共 12 条

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