FAST ANISOTROPIC ETCHING OF SILICON IN AN INDUCTIVELY COUPLED PLASMA REACTOR

被引：111

作者：

PERRY, AJ

BOSWELL, RW

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 02期

关键词：

D O I：

10.1063/1.102127

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：148 / 150

页数：3

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[1] ETCHING IN A PULSED PLASMA
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PORTEOUS, RK
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (08) : 3123 - 3129
[2] PULSED HIGH-RATE PLASMA-ETCHING WITH VARIABLE SI/SIO2 SELECTIVITY AND VARIABLE SI ETCH PROFILES
BOSWELL, RW
HENRY, D
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1095 - 1097
[3] LARGE VOLUME, HIGH-DENSITY RF INDUCTIVELY COUPLED PLASMA
BOSWELL, RW
PORTEOUS, RK
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (17) : 1130 - 1132
[4] A PARAMETRIC STUDY OF THE ETCHING OF SILICON IN SF6 MICROWAVE MULTIPOLAR PLASMAS - INTERPRETATION OF ETCHING MECHANISMS
PETIT, B
PELLETIER, J
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1987, 26 (06): : 825 - 834
[5] PLASMA-ASSISTED ETCHING MECHANISMS - THE IMPLICATIONS OF REACTION PROBABILITY AND HALOGEN COVERAGE
WINTERS, HF
COBURN, JW
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (05): : 1376 - 1383