Electrical properties of two-dimensional electron gases grown on cleaned SiGe virtual substrates

被引：27

作者：

Paul, DJ

Ahmed, A

Griffin, N

Pepper, M

Churchill, AC

Robbins, DJ

Wallis, DJ

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

[2] Def Evaluat & Res Agcy, Elect Sector, Malvern WR14 3PS, Worcs, England

来源：

THIN SOLID FILMS | 1998年 / 321卷

基金：

英国工程与自然科学研究理事会;

关键词：

electrical properties; two-dimensional electron gases; SiGe substrates;

D O I：

10.1016/S0040-6090(98)00470-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The low temperature electrical properties of modulation-doped two-dimensional electron gases (2DEG) in the SiGe system were studied. The effect on the electrical properties of removing the substrate from the growth chamber after the growth of the virtual substrate, chemically cleaning the virtual substrate and then growing the 2DEG on a thin SiGe buffer were investigated. The results demonstrate that the carrier density and mobility decrease as the regrowth interface is moved closer to the 2DEG. Lower temperature desorption of the passivating chemical oxide improves the mobility and carrier density when a regrowth interface is close to the quantum well. The mismatch of Ge content in the virtual substrate and the heterolayers was also shown to produce a reduction in the carrier density and mobility. Crown Copyright (C) 1998 Published by Elsevier Science S.A. All rights reserved.

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页码：181 / 185

页数：5

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