CONDUCTIVITY, PLASMON, AND CYCLOTRON-RESONANCE ANOMALIES IN SI(100) METAL-OXIDE-SEMICONDUCTOR SYSTEMS

[1] FREQUENCY-DEPENDENCE OF SURFACE CYCLOTRON-RESONANCE IN SI [J]. PHYSICAL REVIEW B, 1976, 14 (06): : 2494 - 2497

[2] ABSTREITER G, 1976, PHYS REV B, V14, P2480, DOI 10.1103/PhysRevB.14.2480

[3] OBSERVATION OF 2-DIMENSIONAL PLASMON IN SILICON INVERSION LAYERS [J]. PHYSICAL REVIEW LETTERS, 1977, 38 (17) : 980 - 983

[4] FREQUENCY-DEPENDENCE OF ELECTRON CONDUCTIVITY IN SILICON INVERSION LAYER IN METALLIC AND LOCALIZED REGIMES [J]. PHYSICAL REVIEW LETTERS, 1975, 35 (20) : 1359 - 1362

[5] ABSENCE OF DIFFUSION IN CERTAIN RANDOM LATTICES [J]. PHYSICAL REVIEW, 1958, 109 (05): : 1492 - 1505

[6] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J]. REVIEWS OF MODERN PHYSICS, 1982, 54 (02) : 437 - 672

[7] INTER-SUBBAND OPTICAL-ABSORPTION IN SPACE-CHARGE LAYERS ON SEMICONDUCTOR SURFACES [J]. ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1977, 26 (03): : 263 - 272

[8] SCREENING EFFECT AND QUANTUM TRANSPORT IN A SILICON INVERSION LAYER IN STRONG MAGNETIC-FIELDS [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1977, 43 (05) : 1616 - 1626

[9] CHARGE-DENSITY AND ORIENTATION DEPENDENCE OF THE EFFECTIVE MASS IN ELECTRON INVERSION-LAYERS ON THE PRINCIPAL SURFACES OF SI [J]. SOLID STATE COMMUNICATIONS, 1983, 47 (10) : 819 - 823

[10] BATKE E, UNPUB

[1] FREQUENCY-DEPENDENCE OF SURFACE CYCLOTRON-RESONANCE IN SI [J]. PHYSICAL REVIEW B, 1976, 14 (06): : 2494 - 2497

[2] ABSTREITER G, 1976, PHYS REV B, V14, P2480, DOI 10.1103/PhysRevB.14.2480

[3] OBSERVATION OF 2-DIMENSIONAL PLASMON IN SILICON INVERSION LAYERS [J]. PHYSICAL REVIEW LETTERS, 1977, 38 (17) : 980 - 983

[4] FREQUENCY-DEPENDENCE OF ELECTRON CONDUCTIVITY IN SILICON INVERSION LAYER IN METALLIC AND LOCALIZED REGIMES [J]. PHYSICAL REVIEW LETTERS, 1975, 35 (20) : 1359 - 1362

[5] ABSENCE OF DIFFUSION IN CERTAIN RANDOM LATTICES [J]. PHYSICAL REVIEW, 1958, 109 (05): : 1492 - 1505

[6] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J]. REVIEWS OF MODERN PHYSICS, 1982, 54 (02) : 437 - 672

[7] INTER-SUBBAND OPTICAL-ABSORPTION IN SPACE-CHARGE LAYERS ON SEMICONDUCTOR SURFACES [J]. ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1977, 26 (03): : 263 - 272

[8] SCREENING EFFECT AND QUANTUM TRANSPORT IN A SILICON INVERSION LAYER IN STRONG MAGNETIC-FIELDS [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1977, 43 (05) : 1616 - 1626

[9] CHARGE-DENSITY AND ORIENTATION DEPENDENCE OF THE EFFECTIVE MASS IN ELECTRON INVERSION-LAYERS ON THE PRINCIPAL SURFACES OF SI [J]. SOLID STATE COMMUNICATIONS, 1983, 47 (10) : 819 - 823

[10] BATKE E, UNPUB