Photoluminescence properties of Tb3+ in porous silicon

被引：25

作者：

Elhouichet, H ^{[1
]}

Moadhen, A

Oueslati, M

Férid, M

机构：

[1] Fac Sci Tunis, Dept Phys, Lab Spect Raman, Tunis 1060, Tunisia

[2] Inst Natl Rech Sci & Tech, Hammam Lif 2050, Tunisia

来源：

JOURNAL OF LUMINESCENCE | 2002年 / 97卷 / 01期

关键词：

porous silicon; Tb3+; photoluminescence; excitation mechanism; silicon; rare earth;

D O I：

10.1016/S0022-2313(01)00420-3

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Terbium (Tb3+)/porous silicon (PS) nanocomposites have been formed by impregnation of PS layer in chloride solution of terbium. Complete and uniform penetration of Tb3+ into PS layer is confirmed by Rutherford backscattering spectrometry (RBS) study. Photoluminescence (PL) spectrum shows that Tb3+ ions emit highly in the green region, while the PL band of PS is quenched. The emission of Tb3+ ions depends strongly on the excitation energy and shows a high efficiency at 488 nm corresponding to the maximum absorption band in terbium. A systematic study of the PL versus annealing temperature as performed. It shows an important improvement of the PL intensity for 700 C temperature annealing. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：34 / 39

页数：6

共 18 条

[11] ELECTROCHEMICAL ER DOPING OF POROUS SILICON AND ITS ROOM-TEMPERATURE LUMINESCENCE AT SIMILAR-TO-1.54 MU-M [J].

KIMURA, T ;

YOKOI, A ;

HORIGUCHI, H ;

SAITO, R ;

IKOMA, T ;

SATO, A .

APPLIED PHYSICS LETTERS, 1994, 65 (08) :983-985

[12]

Magaieth R., 1999, J LUMIN, V80, P387

[13] Luminescence of porous silicon/terbium organic complex hybrid [J].

Meng, JX ;

Li, TK ;

Wong, WK ;

Cheah, KW .

APPLIED PHYSICS LETTERS, 2000, 77 (18) :2795-2797

[14]

MOADHEN A, UNPUB J LUMIN

[15]

NAMAVAR F, 1995, MATER RES SOC SYMP P, V358, P375

[16] QUENCHING OF TB3+LUMINESCENCE BY DIRECT TRANSFER AND MIGRATION IN ALUMINUM GARNETS [J].

VANDERZI, JP ;

VANUITER, LG ;

KOPF, L .

PHYSICAL REVIEW B-SOLID STATE, 1972, 6 (02) :651-+

[17] Site of the Er3+ optical centers of the 1.54 μm room-temperature emission in Er-doped porous silicon and the excitation mechanism [J].

Wang, W ;

Isshiki, H ;

Yugo, S ;

Saito, R ;

Kimura, T .

JOURNAL OF LUMINESCENCE, 2000, 87-9 :319-322

[18] Time-resolved photoluminescence spectroscopy of Er-implanted porous silicon [J].

Wu, X ;

White, R ;

Hommerich, U ;

Namavar, F ;

CreminsCosta, AM .

JOURNAL OF LUMINESCENCE, 1997, 71 (01) :13-20

← 1 2 →