Site of the Er3+ optical centers of the 1.54 μm room-temperature emission in Er-doped porous silicon and the excitation mechanism

被引：12

作者：

Wang, W ^{[1
]}

Isshiki, H ^{[1
]}

Yugo, S ^{[1
]}

Saito, R ^{[1
]}

Kimura, T ^{[1
]}

机构：

[1] Univ Electrocommun, Dept Elect Engn, Chofu, Tokyo 1828585, Japan

来源：

JOURNAL OF LUMINESCENCE | 2000年 / 87-9卷

关键词：

Er; porous silicon; excitation mechanism;

D O I：

10.1016/S0022-2313(99)00342-7

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Sites of the Er3+ luminescent centers in Er-doped porous silicon (PS:Er) formed by immersion are studied in order to make clear the cause of the strong room temperature luminescence at 1.54 mu m due to the 4f intra-transition of Er3+ ions. The luminescence spectra and the temperature quenching of the intensity and the fluorescence lifetime are compared between PS:Er samples formed by immersion in an ErCl3/alcohol solution and Er-implanted PS, using the same PS hosts. PS:Er samples formed by immersion show a small temperature quenching in the intensity and the fluorescence lifetime, resulting in a strong luminescence at RT. On the other hand, PS:Er samples formed by Er ion implantation into PS shows almost the same strong temperature quenching as the Er-implanted crystalline Si. These results indicate that the sites of Er ions responsible for the strong RT 1.54 mu m luminescence in PS:Er formed by immersion is not inside Si nanocrystals but on the surface of Si nanocrystals. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：319 / 322

页数：4

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