THERMAL QUENCHING MECHANISM OF YB INTRA-4F-SHELL LUMINESCENCE IN INP

被引：40

作者：

TAGUCHI, A

NAKAGOME, H

TAKAHEI, K

机构：

[1] NTT Basic Research Laboratories, Musashino-shi, Tokyo 180, 3-9-11, Midori-cho

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 10期

关键词：

D O I：

10.1063/1.350173

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thermal quenching mechanism of Yb intra-4f-shell luminescence were clarified by studying the temperature dependences of electrical and optical properties of Yb-doped InP samples. The quenching mechanism which depends on shallow donor concentration was found by comparing temperature dependences of Yb 4f-shell luminescence and free-carrier concentration. This mechanism is a localized Auger effect and is efficient below about 70 K in samples having a larger donor concentration than Yb concentration. At higher temperatures, another quenching mechanism was found to be efficient which does not depend on donor concentration. This quenching of Yb intra-4f-shell luminescence is accompanied by some increase of band-edge related luminescence. This phenomenon is explained by the energy back-transfer mechanism from the excited Yb 4f-shell to the InP host. Although an importance of the free-carrier Auger effect has been suggested in conducting materials, we propose that above two mechanisms dominate the quenching of the Yb 4f-shell luminescence in InP.

引用

页码：5604 / 5607

页数：4

共 21 条

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