PHOTOLUMINESCENCE OF YTTERBIUM-DOPED POROUS SILICON

被引：15

作者：

KIMURA, T ^{[1
]}

YOKOI, A ^{[1
]}

NISHIDA, Y ^{[1
]}

SAITO, R ^{[1
]}

YUGO, S ^{[1
]}

IKOMA, T ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC, TSUKUBA RES & DEV CTR LTD, TSUKUBA, IBARAKI 305, JAPAN

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 18期

关键词：

D O I：

10.1063/1.114293

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Yb3+-related photoluminescence is observed at room temperature from Yb-doped porous silicon layers prepared by the electro-chemical method developed by our group for Er doping of porous silicon layers. After rapid thermal annealing in a pure argon atmosphere at high temperatures (above similar to 900 degrees C), samples show a sharp photoluminescence band at around 1.0 mu m which is assigned to the intrashell 4f-4f transitions F-2(5/2) --> F-2(7/2) of Yb3+. The enlarged energy bandgap of silicon as a result of anodization makes possible the excitation of Yb3+ 4f-electrons with the recombination energy of photocarriers generated in the host porous silicon layers. (C) 1995 American Institute of Physics.

引用

页码：2687 / 2689

页数：3

共 20 条

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