A silicon UV flame detector utilizing photonic crystal

被引:8
作者
Djuric, Z [1 ]
Dankovic, T [1 ]
Jaksic, Z [1 ]
Randjelovic, D [1 ]
Petrovic, R [1 ]
Ehrfeld, W [1 ]
Schmidt, A [1 ]
Hecker, K [1 ]
机构
[1] Inst Microelect Technol & Single Crystals, IHTM, YU-11000 Belgrade, Yugoslavia
来源
DESIGN, TEST, AND MICROFABRICATION OF MEMS AND MOEMS, PTS 1 AND 2 | 1999年 / 3680卷
关键词
silicon ultraviolet photodetectors; photonic crystal;
D O I
10.1117/12.341251
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper we propose a silicon UV name detector for combustion systems. In gas burners the relative intensity of flame radiation is dominant in the ultraviolet region (below 0.35 mu m). In the visible and infrared regions the relative intensity of radiation of the inscandescent surfaces (black body) is several orders of magnitude greater than the gas name radiation intensity. Therefore it is required that the flame detector has a much greater sensitivity in the ultraviolet region. The proposed detector is formed on n-type silicon on isolator wafer. In order to suppress sensitivity in the visible and the IR regions, the absorption region of the detector is greatly reduced, and a UV filter utilizing photonic crystal is designed. The p-n junctions are formed by very shallow diffusion of impurities. The contacts are made after the deposition of a thin oxide layer. The UV filter is then sputtered on the detector surface. The filter consists of a thin silver nlm (protected by MgF2), and a one-dimensional photonic crystal made of twelve pairs of NaF/Y2O3 layers. The photonic band gaps of the crystal should suppress the propagation of the light with wavelengths greater than 0.35 mu m. For the detector active area of 5 mm(2), the thickness of the silver layer of 0.13 mu m and a dark current of 1 nA, the noise equivalent power at 0.32 mu m is 4.23 10-(13)WIHz(1/2). The calculated flame signal to total signal ratio is 0.52.
引用
收藏
页码:601 / 610
页数:10
相关论文
共 30 条
[11]  
HASS G, 1964, PHYS THIN FILMS, V2, P336
[12]  
Hecht E., 1974, OPTICS
[13]   GALLIUM-PHOSPHIDE JUNCTIONS WITH LOW LEAKAGE FOR ENERGY-CONVERSION AND NEAR ULTRAVIOLET DETECTORS [J].
HUGHES, RC ;
ZIPPERIAN, TE ;
DAWSON, LR ;
BIEFELD, RM ;
WALKO, RJ ;
DVORACK, MA .
JOURNAL OF APPLIED PHYSICS, 1991, 69 (09) :6500-6505
[15]   FLAME FAILURE-DETECTION AND MODERN BOILERS [J].
JONES, AR .
JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1988, 21 (10) :921-928
[16]  
KRILOVA TN, 1973, INTERFERENCIONNIE PO
[17]   QUANTUM YIELD OF METAL-SEMICONDUCTOR PHOTODIODES [J].
LI, SS ;
LINDHOLM, FA ;
WANG, CT .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (10) :4123-&
[18]   New UV-enhanced solar blind optical sensors based on monocrystalline zinc sulphide [J].
Malik, A ;
Seco, A ;
Fortunato, E ;
Martins, R .
SENSORS AND ACTUATORS A-PHYSICAL, 1998, 67 (1-3) :68-71
[19]   DISTRIBUTION OF RADIATION INTENSITY IN A SEMICONDUCTOR FILM [J].
NOWAK, M .
OPTICAL ENGINEERING, 1994, 33 (05) :1501-1510
[20]   SILICON P-N-JUNCTION PHOTO-DIODES SENSITIVE TO ULTRAVIOLET-RADIATION [J].
OUCHI, H ;
MUKAI, T ;
KAMEI, T ;
OKAMURA, M .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (12) :1965-1969