Substitutional incorporation of arsenic from GaAs substrates into MOVPE grown InSbBi thin films

The substitutional incorporation of As from the GaAs substrate during the MOVPE growth of InSbBi layers has been verified by resonant Raman scattering measurements. The anticipated reduction in the energy gap was also confirmed by infrared spectroscopy. The detection of an In-As LO phonon mode, as well as the absence of an In-Bi phonon mode, established that no Bi was substitutionally incorporated into the layers and that the previously observed lattice contraction and band gap reduction are entirely attributed to As incorporation. (C) 2001 Published by Elsevier Science B.V.