Resistive switching of rose bengal devices:: A molecular effect?

被引：45

作者：

Karthaeuser, Silvia

Luessem, Bjorn

Weides, Martin

Alba, Manuela

Besmehn, Astrid

Oligschlaeger, Robert

Waser, Rainer

机构：

[1] Res Ctr Julich GmbH, Ctr Nanoelect Syst Informat Technol, D-52425 Julich, Germany

[2] Res Ctr Julich GmbH, Inst Solid State Res, D-52425 Julich, Germany

[3] Infineon Technol, D-85579 Neubiberg, Germany

[4] Res Ctr Julich GmbH, Cent Div Analyt Chem, D-52425 Julich, Germany

[5] Rhein Westfal TH Aachen, IWE, D-52074 Aachen, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2006年 / 100卷 / 09期

关键词：

D O I：

10.1063/1.2364036

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The resistive switching behavior of devices consisting of aluminum top electrode, molecular layer (rose bengal), and bottom electrode (zinc oxide and indium tin oxide) is examined. By measuring the current versus voltage dependence of these devices for various frequencies and by systematically varying the composition of the device, we show that the switching is an extrinsic effect that is not primarily dependent on the molecular layer. It is shown that the molecular layer is short circuited by filaments of either zinc oxide or aluminum and that the switching effect is due to a thin layer of aluminum oxide at the zinc oxide/aluminum interface. (c) 2006 American Institute of Physics.

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页数：6

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