Characterization of Sol-Gel Derived and Crystallized ZrO2 Thin Films

被引：19

作者：

Shimizu, Hirofumi ^{[1
]}

Konagai, Satoshi ^{[1
]}

Ikeda, Masanori ^{[1
]}

Nishide, Toshikazu ^{[1
]}

机构：

[1] Nihon Univ, Coll Engn, Fukushima 9638642, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2009年 / 48卷 / 10期

关键词：

ATOMIC LAYER DEPOSITION; GATE DIELECTRICS; ELECTRICAL-PROPERTIES; THERMAL-STABILITY; ZIRCONIUM DIOXIDE; TEMPERATURE; DESORPTION; SURFACE;

D O I：

10.1143/JJAP.48.101101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Sol-gel-derived zirconium dioxide (ZrO2) films on silicon (Si) substrates fired in air at 350 and 450 degrees C, using Zr(OH)(4) sol based on formic acid (HCOOH) solution, are amorphous and approximately 9-10 nm thick. Crystallization occurs at first at 550 degrees C as amorphous/tetragonal (011), and finally, at 700 degrees C, the ZrO2 film crystallizes into tetragonal (011)/monoclinic ((1) over bar 11) and (111) structures. The temperature-programmed desorption curve is separated into five distinct H2O desorption components caused by physisorbed H2O, chemisorbed OH, and Zr-OH bonds in the ZrO2 film, and a model is proposed to explain the mechanism of H2O desorption. Thus, H2O desorption and crystallization processes in the ZrO2 film are clarified: consequently the relationships between the film packing density and electrical characteristics are optimized. On the basis of capacitance-voltage characteristics, the dielectric constant (relative permittivity; epsilon(ZrO2)) of the sol-gel-derived ZrO2 film fired at 550 degrees C was calculated to be 12, which is much higher than that of silicon dioxide (SiO2; 3.9). (C) 2009 The Japan Society of Applied Physics

引用

页码：1011011 / 1011016

页数：6

共 31 条

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