Photoluminescence study of Sb-doped p-type ZnO films by molecular-beam epitaxy

被引：193

作者：

Xiu, FX ^{[1
]}

Yang, Z ^{[1
]}

Mandalapu, LJ ^{[1
]}

Zhao, DT ^{[1
]}

Liu, JL ^{[1
]}

机构：

[1] Univ Calif Riverside, Dept Elect Engn, Quantum Struct Lab, Riverside, CA 92521 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 25期

关键词：

D O I：

10.1063/1.2146208

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated photoluminescence (PL) from reliable and reproducible Sb-doped p-type ZnO films grown on n-Si (100) by molecular-beam epitaxy. Well-resolved PL spectra were obtained from completely dopant-activated samples with hole concentrations above 1.0x10(18) cm(-3). From free electron to acceptor transitions, acceptor binding energy of 0.14 eV is determined, which is in good agreement with analytical results of the temperature-dependent PL measurements. Another broad peak at 3.050 eV, which shifts to lower energy at higher temperatures, indicates the formation of deep acceptor level bands related to Zn vacancies, which are created by Sb doping. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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