P-type conducting ZnO: fabrication and characterisation

被引：41

作者：

Kaminska, E ^{[1
]}

Piotrowska, A ^{[1
]}

Kossut, J ^{[1
]}

Butkute, R ^{[1
]}

Dobrowolski, W ^{[1
]}

Lukasiewicz, R ^{[1
]}

Barcz, A ^{[1
]}

Jakiela, R ^{[1
]}

Dynowska, E ^{[1
]}

Przezdziecka, E ^{[1
]}

Aleszkiewicz, M ^{[1
]}

Wojnar, P ^{[1
]}

Kowaczyk, E ^{[1
]}

机构：

[1] Inst Electr Mat Technol, PL-02668 Warsaw, Poland

来源：

E-MRS 2004 FALL MEETING SYMPOSIA C AND F | 2005年 / 2卷 / 03期

关键词：

D O I：

10.1002/pssc.200460659

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report on the fabrication of ZnO:N by thermal oxidation of sputter-deposited zinc nitride. Through optimising several technological steps we achieved p-type conductivity with carrier concentration in mid 10(17) cm(-3) range and mobility of similar to 10 cm(2)/Vs. PL spectra of p-type ZnO:N films show a sharp peak at 3.36 eV, most likely due to neutral acceptor bound excitons. The transmittance of p-ZnO:N in the whole visible spectrum is similar to 80% making it suitable for transparent electronics. (c) 2005 WILEY-VCH Verlag GmbH W Co. KGaA, Weinheim.

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页码：1119 / 1124

页数：6

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