Site-occupying behavior of boron in compensated p-type 4H-SiC grown by sublimation epitaxy

被引:9
作者
Kakanakova-Georgieva, A [1 ]
Yakimova, R
Linnarsson, MK
Janzén, E
机构
[1] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden
[2] Royal Inst Technol, S-16440 Kista, Sweden
关键词
D O I
10.1063/1.1433931
中图分类号
O59 [应用物理学];
学科分类号
摘要
Results from electrical and optical measurements of boron in compensated p-type 4H-SiC layers doped with Al, N, and B are reported. The layers were produced by sublimation epitaxy and characterized by secondary ion mass spectrometry, capacitance-voltage, and cathodoluminescence techniques. The boron-related contribution to the net acceptor concentration in the layers as well as the boron-related emission at similar to505 nm are detected for various growth conditions. The effect of the concentrations of the attendant impurities Al and N, concentration ratio of Al to N atoms, and growth rate on the site-occupying behavior of boron in the layers is discussed. (C) 2002 American Institute of Physics.
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页码:3471 / 3473
页数:3
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