Electrical properties of Ru-based alloy gate electrodes for dual metal gate Si-CMOS

被引：61

作者：

Misra, V ^{[1
]}

Zhong, HC ^{[1
]}

Lazar, H ^{[1
]}

机构：

[1] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27607 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2002年 / 23卷 / 06期

关键词：

advanced gatestacks; CMOS; gate electrodes; metal alloy; metal gates; MOS transistors; Ru; Ru-Ta; Ta;

D O I：

10.1109/LED.2002.1004233

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, low resistivity Ru and Ru-Ta alloy films, deposited via reactive sputtering, were evaluated as gate electrodes for p- and n-MOSFET devices, respectively. MOSFETs fabricated via a conventional process flow indicated that the work functions of Ru and Ru-Ta alloys were compatible with p- and n-MOSFET devices, respectively. Both of the metal gated devices eliminated gate depletion effects. Good MOSFET characteristics, such as I-DS-V-GS and mobility, were obtained for both Ru-gated PMOSFETs and Ru-Ta gated NMOSFETs.

引用

页码：354 / 356

页数：3

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