Micromagnetic simulations of magnetoresistive behavior of sub-micrometer spin-valve MRAM devices

被引：19

作者：

Oti, JO

Russek, SE

机构：

[1] Electromagnetic Technology Division, Natl. Inst. of Std. and Technology, Boulder, CO

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1997年 / 33卷 / 05期

关键词：

D O I：

10.1109/20.617923

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of device shape and size on the giant magnetoresistive (MR) response of NiFe7.5nm/Co-0.6nm/Cu-3nm/Co-0.6nm/NiFe7.5nm/FeMn spin-valve magnetoresistive random access memory (MRAM) stripes are studied by micromagnetic simulation, Samples having aspect ratios of 10:1, 3:1 and 1.5:1, and line widths varying from 0.5 mu m to 1.5 mu m are simulated. The effects of the magnetostatic coupling between the magnetic layers and their self-demagnetization are studied.

引用

页码：3298 / 3300

页数：3

共 7 条

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