STM studies of Si(5 5 12) 2x1 surfaces

被引：15

作者：

Suzuki, T ^{[1
]}

Minoda, H ^{[1
]}

Tanishiro, Y ^{[1
]}

Yagi, K ^{[1
]}

Sueyoshi, T ^{[1
]}

Sato, T ^{[1
]}

Iwatsuki, M ^{[1
]}

机构：

[1] JEOL LTD, AKISHIMA, TOKYO 196, JAPAN

来源：

SURFACE SCIENCE | 1996年 / 357卷 / 1-3期

基金：

日本学术振兴会;

关键词：

scanning tunneling microscopy; silicon; single crystal surfaces; surface roughening;

D O I：

10.1016/0039-6028(96)00215-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We carried out STM observations of Si(5 5 12) surfaces. STM images showed that the surface has a long period of about 5 nm along the [665] direction that coincides with a period of the bulk terminated structure, and a period of about 0.7 nm along the [110] direction that coincides with a 2-fold period of the bulk terminated structure; the 2 x 1 structure. The long period along the [66(5) over bar] direction is composed of 7 arrays of bright dots. These bright dots appear at the adatom positions of a surface structure model of the (5 5 12) surface proposed previously from RHEED pattern analysis. The phase shifts of the long period which are equivalent to steps are observed on the surface. A surface structural phase transition found in REM-RHEED studies at about 900 degrees C was also observed.

引用

页码：522 / 526

页数：5

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