Influence of the laser fluence on the electrical properties of pulsed-laser-deposited SrBi2Ta2O9 thin films

被引：33

作者：

Bu, SD ^{[1
]}

Park, BH

Kang, BS

Kang, SH

Noh, TW

Jo, W

机构：

[1] Seoul Natl Univ, Dept Phys, Seoul 151742, South Korea

[2] Seoul Natl Univ, Condensed Matter Res Inst, Seoul 151742, South Korea

[3] LG Corp Inst Technol, Seoul 137140, South Korea

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 08期

关键词：

D O I：

10.1063/1.124627

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Polycrystalline SrBi2Ta2O9 ferroelectric thin films were grown on Pt/Ti/SiO2/Si substrates using pulsed-laser deposition. By adjusting the laser fluence, we could successfully control remnant polarization of the films. In a narrow fluence range of 1.0-1.5 J/cm(2), films with large remnant polarizations (as high as 18.7 mu C/cm(2)) could be obtained. The choice of an optimal laser fluence was found to be very important to control electrical properties of the films. From electron-probe microanalysis, it was demonstrated that the Bi content is closely related with the remnant polarization. (C) 1999 American Institute of Physics. [S0003-6951(99)03234-9].

引用

页码：1155 / 1157

页数：3

共 15 条

[1] Preparation and properties of ferroelectric Bi2SrTa2O9 thin films for FeRAM using flash-MOCVD
Ami, T
Hironaka, K
Isobe, C
Nagel, N
Sugiyama, M
Ikeda, Y
Watanabe, K
Machida, A
Miura, K
Tanaka, M
[J]. METAL-ORGANIC CHEMICAL VAPOR DEPOSITION OF ELECTRONIC CERAMICS II, 1996, 415 : 195 - 200
[2] Laser-ablation deposition and characterization of ferroelectric capacitors for nonvolatile memories
Auciello, O
Ramesh, R
[J]. MRS BULLETIN, 1996, 21 (06) : 31 - 36
[3] The effect of excess bismuth on the ferroelectric properties of SrBi2Ta2O9 thin films
Chen, TC
Li, TK
Zhang, XB
Desu, SB
[J]. JOURNAL OF MATERIALS RESEARCH, 1997, 12 (06) : 1569 - 1575
[4] PULSED-LASER ABLATION SYNTHESIS AND CHARACTERIZATION OF LAYERED PT/SRBI2TA2O9/PT FERROELECTRIC CAPACITORS WITH PRACTICALLY NO POLARIZATION FATIGUE
DAT, R
LEE, JK
AUCIELLO, O
KINGON, AI
[J]. APPLIED PHYSICS LETTERS, 1995, 67 (04) : 572 - 574
[5] FATIGUE-FREE FERROELECTRIC CAPACITORS WITH PLATINUM-ELECTRODES
DEARAUJO, CAP
CUCHIARO, JD
MCMILLAN, LD
SCOTT, MC
SCOTT, JF
[J]. NATURE, 1995, 374 (6523) : 627 - 629
[6] Oriented growth of SrBi2Ta2O9 ferroelectric thin films
Desu, SB
Vijay, DP
Zhang, X
He, BP
[J]. APPLIED PHYSICS LETTERS, 1996, 69 (12) : 1719 - 1721
[7] CHARACTERIZATION OF PB0.97ND0.02(ZR0.55TI0.45)O3 THIN-FILMS PREPARED BY PULSED-LASER ABLATION
FRANTTI, J
LANTTO, V
[J]. JOURNAL OF APPLIED PHYSICS, 1994, 76 (04) : 2139 - 2143
[8] Nonferroelectric epitaxial Sr-Bi-Ta oxide thin film with a high dielectric constant
Hyun, SJ
Park, BH
Bu, SD
Jung, JH
Noh, TW
[J]. APPLIED PHYSICS LETTERS, 1998, 73 (17) : 2518 - 2520
[9] HYUN SJ, IN PRESS J KOREAN PH
[10] Texture control and interfacial structures of SrBi2Ta2O9 thin films on Pt
Lee, JS
Kim, HH
Kwon, HJ
Jeong, YW
[J]. APPLIED PHYSICS LETTERS, 1998, 73 (02) : 166 - 168

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