Bottom electrode structures of Pt/RuO2/Ru for integration of (Ba,Sr)TiO3 thin films on polysilicon

被引：11

作者：

Choi, ES ^{[1
]}

Lee, JC ^{[1
]}

Hwang, JS ^{[1
]}

Park, JB ^{[1
]}

Yoon, SG ^{[1
]}

机构：

[1] Chungnam Natl Univ, Dept Mat Engn, Taejon 305764, South Korea

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1999年 / 146卷 / 11期

关键词：

D O I：

10.1149/1.1392612

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The new electrode structures of Pt/RuO2/Ru on polysilicon were prepared by metallorganic chemical vapor deposition (MOCVD). The barrier layers of RuO2/Ru deposited by MOCVD showed a stable interface and did not affect the surface morphology of the platinum bottom electrode even at a high annealing temperature of 800 degrees C. The barrier layers effectively alleviated the interdiffusion of Pt, O, and Si at annealing temperatures above 700 degrees C in an O-2 ambient. Contacts in the as-deposited state exhibited linear current-voltage characteristics with a specific contact resistance of 5.0 x 10(-5) R cm(2). Contacts subjected to thermal annealing up to 800 degrees C for 1 h in an oxygen ambient showed almost constant contact resistance. The (Ba, Sr) TiO3 films deposited by MOCVD at low temperature on Pt/RuO2/Ru/polysilicon showed attractive electrical properties in high-density memory devices applications. (C) 1999 The Electrochemical Society. S0013-4651 (99)02-086-8. All rights reserved.

引用

页码：4189 / 4193

页数：5

共 10 条

[1]

DEARAUJO CAP, 1993, Patent No. 12542

[2] Microstructure dependence of electrical properties of (Ba0.5Sr0.5)TiO3 thin films deposited on Pt/SiO2/Si [J].