Demonstration of the effect of uniaxial stress on the electronic structure of bond-centered muonium in Si

被引：12

作者：

Chow, KH ^{[1
]}

Hitti, B

Lord, JS

机构：

[1] Univ Alberta, Dept Phys, Edmonton, AB T6G 2J1, Canada

[2] TRIUMF, Vancouver, BC V6T 2A3, Canada

[3] Rutherford Appleton Lab, ISIS Facil, Didcot OX11 0QX, Oxon, England

来源：

PHYSICAL REVIEW B | 2006年 / 73卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.73.113202

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We demonstrate that compressive uniaxial stress modifies the electronic structure of bond-centered muonium (Mu(BC)(0)) in Si. The stress was applied along the < 100 > direction of the sample and results in a significant change in the hyperfine parameters of Mu(BC)(0).

引用

页数：4

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