XPS investigation of preferential sputtering of S from MoS2 and determination of MoSx stoichiometry from Mo and S peak positions

被引：390

作者：

Baker, MA ^{[1
]}

Gilmore, R ^{[1
]}

Lenardi, C ^{[1
]}

Gissler, W ^{[1
]}

机构：

[1] Commiss European Communities, Inst Hlth & Consumer Protect, Joint Res Ctr, I-21020 Ispra, VA, Italy

来源：

APPLIED SURFACE SCIENCE | 1999年 / 150卷 / 1-4期

关键词：

MoS2; XPS; preferential sputtering;

D O I：

10.1016/S0169-4332(99)00253-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The preferential sputtering of S from bulk MoS2 standard samples exposed to 3 keV Ar+ ion bombardment has been studied by XPS. The MoSx stoichiometry decreases from MoS2 to MoS1.12 with a concomitant reduction in the Mo 3d(5/2) binding energy from 229.25 to 228.35 eV. The altered layer extends to a depth of 3.8 nm and is proposed to consist of a single amorphous MoSx phase in which Mo has a varying number of nearest neighbour S atoms. Using peak positions alone it is possible to determine the MoSx stoichiometry to an accuracy of x +/- 0.1 from a plot of MoSx stoichiometry against (Mo 3d(5/2)-S 2p(3/2)) binding energy. The results are of strong current interest for coating analysis applications as MoS2 is a compound capable of providing low friction properties when incorporated into hard coatings. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：255 / 262

页数：8

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