ION-BEAM MODIFICATION OF THE PHYSICAL-PROPERTIES OF MOSX FILMS

被引：6

作者：

KAYE, SP ^{[1
]}

KHEYRANDISH, H ^{[1
]}

COLLIGON, JS ^{[1
]}

ROBERTS, EW ^{[1
]}

机构：

[1] AEA TECHNOL,EUROPEAN SPACE TRIBOL LAB,WARRINGTON WA3 6AT,ENGLAND

来源：

THIN SOLID FILMS | 1993年 / 228卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(93)90610-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin solid films of MoS(x) have been deposited by both r.f. magnetron and d.c. sputtering. The composition of these films is dependent on the deposition conditions and is explained in terms of studies of the angular distribution of the sulphur and molybdenum components during sputtering. Post-deposition ion bombardment of these films with 80 keV ions (Xe, Ar or Ne) as well as concurrent ion bombardment during deposition with 100-200 eV Ar+ results in sulphur-deficient films which are also compacted. The composition of the films is dependent on the ion species and fluence whilst the rate of compaction is found to scale with the nuclear component of the deposited energy.

引用

页码：252 / 256

页数：5

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