Effect of ion-energy on the properties of amorphous GaN films produced by ion-assisted deposition

被引：6

作者：

Lanke, U ^{[1
]}

Koo, A

Granville, S

Trodahl, J

Markwitz, A

Kennedy, J

Bittar, A

机构：

[1] Victoria Univ Wellington, Sch Chem & Phys Sci, Wellington, New Zealand

[2] Inst Geol & Nucl Sci, Lower Hutt, New Zealand

[3] Ind Res Ltd, Measurement Stand Lab, Lower Hutt, New Zealand

来源：

MODERN PHYSICS LETTERS B | 2001年 / 15卷 / 28-29期

关键词：

D O I：

10.1142/S0217984901003275

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Amorphous GaN films were deposited on various substrates viz. Si (100), quartz, glass, Al, stainless steel and glassy carbon by thermal evaporation of gallium in the presence of energetic nitrogen ions from a Kaufman source. The films were deposited at room temperature and 5 x 104 mbar nitrogen partial pressure. The effect of a low energy nitrogen ion beam during the synthesis of films was investigated for energies between 40 eV and 900 eV. The N:Ga atomic ratio, bonding state, microstructure, surface morphology, and electrical properties of the deposited a-GaN films were studied by different characterisation techniques, The films are found to be X-ray amorphous in nature, which is confirmed by Raman spectroscopy. Rutherford Backscattering Spectroscopy (RBS) and Nuclear Reaction Analysis (NRA) indicate the N:Ga atomic ratio in the films. The 400-750 eV energy range is thought to be optimal for the production of single-phase amorphous GaN. The effect of ion-energy on optical, Raman, and electrical conductivity measurements of the films is also presented.

引用

页码：1355 / 1360

页数：6

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