Amorphous GaN grown by room temperature molecular beam epitaxy

被引：27

作者：

Kuball, M

Mokhtari, H

Cherns, D

Lu, J

Westwood, DI

机构：

[1] Univ Bristol, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England

[2] Univ Wales Coll Cardiff, Dept Phys & Astron, Cardiff CF2 3YB, S Glam, Wales

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2000年 / 39卷 / 08期

关键词：

amorphous GaN; short-range bonding structure; Raman scattering; transmission electron microscopy;

D O I：

10.1143/JJAP.39.4753

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Amorphous GaN films were grown at room temperature by molecular beam epitaxy on the oxide layer of GaAs(001) substrates. Their properties were investigated by transmission electron microscopy/diffraction and micro-Raman spectroscopy. A broad Raman peak at 650 cm(-1) identifies the amorphous GaN. The results suggest that the local short-range bonding structure in amorphous GaN is different from crystalline GaN supporting theoretical predictions [Stumm and Drabold: Phys. Rev. Lett. 79 (1997) 677] that amorphous GaN is attractive for device applications.

引用

页码：4753 / 4754

页数：2

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