Monte Carlo model of charging in resists in e-beam lithography

被引：11

作者：

Ko, YU ^{[1
]}

Joy, DC ^{[1
]}

机构：

[1] Univ Tennessee, EM Facil, Knoxville, TN 37996 USA

来源：

METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XV | 2001年 / 4344卷

关键词：

beam deflection; charging; electron beam lithography; mask pattern; insulator;

D O I：

10.1117/12.436751

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Charging effects on beam deflection of incident electrons in electron beam lithography are investigated. We show first in detail how the non-unity yield of electron generation in insulator resists leads to local charging accumulation and affects the beam deflection of incident electrons as charging develops. Then the amounts of beam deflection are identified for various operating and resist dimension conditions, and then we conclude that the beam deflection should be avoided for more accurate manufacturing semiconductor devices by the control of charging effects.

引用

页码：544 / 551

页数：8

共 11 条

[1] Charging and discharging of electron beam resist films [J].

Bai, M ;

Pease, RFW ;

Tanasa, C ;

McCord, MA ;

Pickard, DS ;

Meisburger, D .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (06) :2893-2896

[2] ELECTRON TRAJECTORY TRACKING ALGORITHMS FOR ANALYZING VOLTAGE CONTRAST SIGNALS IN THE SCANNING ELECTRON-MICROSCOPE [J].

CHIM, WK ;

LOW, TS ;

CHAN, DSH ;

PHANG, JCH .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1988, 21 (01) :1-9

[3] CHARGING EFFECTS FROM ELECTRON-BEAM LITHOGRAPHY [J].

CUMMINGS, KD ;

KIERSH, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06) :1536-1539

[4] A STUDY OF DEPOSITED CHARGE FROM ELECTRON-BEAM LITHOGRAPHY [J].

CUMMINGS, KD .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (06) :1786-1788

[5] Computer modeling of charging induced electron beam deflection in electron beam lithography [J].

Hwu, JJ ;

Ko, YU ;

Joy, DC .

METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XIV, 2000, 3998 :239-246

[6]

ITHO H, 1991, J VAC SCI TECHNOL B, V9, P3039

[7]

Ko YU, 1998, SCANNING, V20, P447

[8]

Ko YU, 1998, SCANNING, V20, P549

[9] Monte Carlo model of charging in resists in e-beam lithography [J].

Ko, YU ;

Hwu, JJ ;

Joy, DC .

METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XIV, 2000, 3998 :694-702

[10] RESIST CHARGING IN ELECTRON-BEAM LITHOGRAPHY [J].

LIU, W ;

INGINO, J ;

PEASE, RF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (05) :1979-1983

← 1 2 →