100-kV advanced nanoelectron-beam exposure system for 8,12" wafers and X-ray masks

We have developed a 100-kV point electron-beam (EB) system for the fabrication of sub-0.1-mu m MOS devices on 8-inch wafers and x-ray masks. The calculated beam diameter is less than 4 nm at 100 kV and 7 nm at 50 kV. The EB system has a large deflection field and incorporates the means of correcting deflection distortion, focus, and stigma to obtain highly precise exposure. This system includes an in-line developer with an automatic wafer loader and is installed in a thermal magnetic shield chamber. The system enables us to expose patterns with dimensions as small as 15 nm with a high precision and throughput.