NEW APPROACH TO PROJECTION-ELECTRON LITHOGRAPHY WITH DEMONSTRATED 0.1 MU-M LINEWIDTH

被引：135

作者：

BERGER, SD

GIBSON, JM

机构：

[1] AT and T Bell Laboratories, Murray Hill, NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 02期

关键词：

D O I：

10.1063/1.103969

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a new approach to projection-electron lithography which allows sub-0.1 μm resolution to be achieved with short exposure times and a parallel illumination system. We have printed a grating pattern into PMMA with 0.1 μm linewidths. Our new technique consists of using an angularly limiting filter which differentiates electrons that have traversed a transparent mask in terms of the degree of scattering between the patterned and unpatterned regions.

引用

页码：153 / 155

页数：3

共 8 条

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