Characterization and elimination of dry etching damaged layer in Pt/Pb(Zr0.53Ti0.47)O3/Pt ferroelectric capacitor

被引：61

作者：

Lee, JK

Kim, TY

Chung, I

Desu, SB

机构：

[1] Samsung Adv Inst Technol, Mat & Device Sector, Suwon 440600, South Korea

[2] Virginia Polytech Inst & State Univ, Dept Mat Sci & Engn, Blacksburg, VA 24061 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 03期

关键词：

D O I：

10.1063/1.124367

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The damage of Pb(Zr0.53Ti0.47)O-3 thin film due to dry etching process was characterized in terms of the microstructure and electrical properties. The damaged layer seems to be amorphous and the thickness of the damaged layer is about 10 nm. The existence of such a layer in Pt/Pb(Zr0.53Ti0.47)O-3/Pt ferroelectric capacitor tends to increase the coercive voltage and the leakage current. The damaged layer was not fully reverted to perovskite phase by the thermal annealing. With the wet cleaning treatment, however, the damaged layer was successfully removed thereby revealing significantly improved electrical properties. (C) 1999 American Institute of Physics. [S0003-6951(99)00529-X].

引用

页码：334 / 336

页数：3

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