Reactive ion etching damage to the electrical properties of ferroelectric thin films

被引：31

作者：

Pan, W ^{[1
]}

Thio, CL ^{[1
]}

Desu, SB ^{[1
]}

机构：

[1] Virginia Polytech Inst & State Univ, Dept Mat Sci & Engn, Blacksburg, VA 24061 USA

来源：

JOURNAL OF MATERIALS RESEARCH | 1998年 / 13卷 / 02期

关键词：

D O I：

10.1557/JMR.1998.0048

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Reactive ion etching damage to Pt/Pb(Zr,Ti)O-3/Pt ferroelectric capacitors was evaluated under Ar bombardment and CHClFCF3 etch plasmas. The hysteresis and degradation properties, including fatigue and leakage current, were examined systematically to study the mechanism of damage. The damage was measured quantitatively by comparing the relative voltage shift with respect to the initial hysteresis loops. The damage effects were found to be dependent on etching time and mainly due to the physical effect of ion bombardment. The electrical properties of the etched Pt/Pb(Zr,Ti)O-3/Pt capacitors were substantially recovered by annealing at 400 degrees C for 30 min.

引用

页码：362 / 367

页数：6

共 15 条

[1] INVESTIGATIONS ON DAMAGE CAUSED BY ION ETCHING OF SIO2 LAYERS AT LOW-ENERGY AND HIGH DOSE [J].

DEPPE, HR ;

HASLER, B ;

HOPFNER, J .

SOLID-STATE ELECTRONICS, 1977, 20 (01) :51-55

[2] ETCHING AND FILM FORMATION IN CF3BR PLASMAS - SOME QUALITATIVE OBSERVATIONS AND THEIR GENERAL IMPLICATIONS [J].

FLAMM, DL ;

COWAN, PL ;

GOLOVCHENKO, JA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (06) :1341-1347

[3] EFFECT OF ION-BEAM SPUTTER DAMAGE ON SCHOTTKY-BARRIER FORMATION IN SILICON [J].

FONASH, SJ ;

ASHOK, S ;

SINGH, R .

APPLIED PHYSICS LETTERS, 1981, 39 (05) :423-425

[4] PLZT THIN-FILM WAVEGUIDES [J].

KAWAGUCHI, T ;

ADACHI, H ;

SETSUNE, K ;

YAMAZAKI, O ;

WASA, K .

APPLIED OPTICS, 1984, 23 (13) :2187-2191

[5]

McGuire G.E., 1988, Semiconductor materials and process technology handbook

[6]

MIKKELSEN JC, 1986, APPL PHYS LETT, V49, P1617

[7] REACTIVE ION ETCHING OF PBZR1-XTIXO3 AND RUO2 FILMS BY ENVIRONMENTALLY SAFE GASES [J].

PAN, W ;

DESU, SB ;

YOO, IK ;

VIJAY, DP .

JOURNAL OF MATERIALS RESEARCH, 1994, 9 (11) :2976-2980

[8] DAMAGE INDUCED IN SI BY ION MILLING OR REACTIVE ION ETCHING [J].

PANG, SW ;

RATHMAN, DD ;

SILVERSMITH, DJ ;

MOUNTAIN, RW ;

DEGRAFF, PD .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) :3272-3277

[9]

PANG SW, 1984, SOLID STATE TECHNOL, V27, P249

[10] COMPARISON OF CF4-O2 AND CF2CL2-O2 PLASMAS USED FOR THE REACTIVE ION ETCHING OF SINGLE-CRYSTAL SILICON [J].

PARASZCZAK, J ;

HATZAKIS, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04) :1412-1417

← 1 2 →