Luminescence properties of CdS quantum dots on ZnSe

被引：15

作者：

Kobayashi, M

Nakamura, S

Kitamura, K

Umeya, H

Jia, A

Yoshikawa, A

Shimotomai, M

Kato, Y

Takahashi, K

机构：

[1] Chiba Univ, Dept Elect & Mech Engn, Inage Ku, Chiba 2638522, Japan

[2] Teikyo Univ Sci & Technol, Dept Elect & Informat Sci, Yamanashi 4090193, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1999年 / 17卷 / 05期

关键词：

D O I：

10.1116/1.590862

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The luminescence properties of self-assembled CdS quantum dots (QDs) were studied. CdS QD structures formed on ZnSe buffer layers without capping layers showed intense photoluminescence (PL). The PL peak position could be controlled by changing the amount of CdS deposited. Introduction of the capping layer enhanced the PL intensity. The buffer layer material selected also affected the luminescence properties of the CdS QDs, and brighter PL with the higher transition energy was observed by replacing the ZnSe buffer layer with ZnSSe. A light emitting diode structure based on CdS QDs sandwiched in the pn junction of ZnSe was fabricated and bright blue or green luminescence from current injection was observed at 77 K as well as at room temperature. (C) 1999 American Vacuum Society. [S0734-211X(99)03105-4].

引用

页码：2005 / 2008

页数：4

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