Molecular beam epitaxy of CdS self-assembled quantum dots on ZnSe

被引：11

作者：

Kobayashi, M

Nakamura, S

Wakao, K

Yoshikawa, A

Takahashi, K

机构：

[1] Chiba Univ, Dept E&EE, Inage Ku, Chiba 263, Japan

[2] Teikyo Univ Sci & Technol, Dept E&IS, Yamanashi 40901, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 03期

关键词：

D O I：

10.1116/1.590066

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

CdS quantum dot (QD) structures were grown by molecular beam epitaxy on (001) ZnSe. Circular QDs were observed from the sample, grown at 220 degrees C, whereas rectangular QDs were observed from the sample grown at 280 degrees C. The difference of the dot shape may be related to the metastable nature of CdS since CdS thin films grown at 220 degrees C show zincblende structures and thin films grown at 280 degrees C show wurtzite structures. The PL peak position and linewidth were strongly affected by the growth condition of QDs; QD samples with a thicker CdS deposition showed redshifts of the peak position along with the narrowing of the linewidth. (C) 1998 American Vacuum Society.

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页码：1316 / 1320

页数：5

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