Semiconductor nanostructures formed by the Turing instability

被引：42

作者：

Temmyo, J

Notzel, R

Tamamura, T

机构：

[1] NTT Opto-electronics Laboratories, Atsugi-shi, Kanagawa 243-01

[2] Paul-Drude-Inst. F. F., D-10117 Berlin

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 08期

关键词：

D O I：

10.1063/1.119735

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We describe the surface topography domain in a strained InGaAs/AlGaAs system on the GaAs (311)B substrate during metalorganic-vapor-phase-epitaxial growth. The surface rearrangement resulting in the formation of nanostructures seems to belong to a Turing-type self-organization phenomenon that results from a spontaneous symmetry-breaking instability in nonlinear dynamical systems. The unique surface morphologies on the high Miller index faces suggest a novel fourth growth mode due to Turing-type self-organization. (C) 1997 American Institute of Physics.

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页码：1086 / 1088

页数：3

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