Formation of self-assembling CdSe quantum dots on ZnSe by molecular beam epitaxy

被引：318

作者：

Xin, SH ^{[1
]}

Wang, PD ^{[1
]}

Yin, A ^{[1
]}

Kim, C ^{[1
]}

Dobrowolska, M ^{[1
]}

Merz, JL ^{[1
]}

Furdyna, JK ^{[1
]}

机构：

[1] UNIV NOTRE DAME, DEPT ELECT ENGN, NOTRE DAME, IN 46556 USA

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 25期

关键词：

D O I：

10.1063/1.117558

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the formation of self-assembling CdSe quantum dots during molecular beam epitaxial growth on ZnSe and ZnMnSe. Atomic force microscopy measurements on specimens with uncapped dots show relatively narrow dot size distributions, with typical dot diameters of 40+/-5 nm, and with a diameter-to-height ratio consistently very close to 4:1. Uncapped CdSe dots are unstable with time: their density was observed to drop by an order of magnitude in 10 days, with clear evidence of ripening observed for some dots. Photoluminescence from capped dots indicates exciton localization much stronger than in ZnCdSe/ZnSe quantum wells, due to the additional lateral confinement. (C) 1996 American Institute of Physics.

引用

页码：3884 / 3886

页数：3

共 17 条

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