Shot noise in low-resistance magnetic tunnel junctions

被引:20
作者
George, PK [1 ]
Wu, Y
White, RM
Murdock, E
Tondra, M
机构
[1] St Cloud State Univ, Dept Elect & Comp Engn, St Cloud, MN 56301 USA
[2] Carnegie Mellon Univ, Dept Elect & Comp Engn, Ctr Data Storage Syst, Pittsburgh, PA 15213 USA
[3] Seagate Recording Heads, Minneapolis, MN 55435 USA
[4] Nonvolatile Elect Inc, Eden Prairie, MN 55344 USA
关键词
Tunnelling magnetoresistance - Acoustic noise measurement - Tunnel junctions - Magnetic devices;
D O I
10.1063/1.1446210
中图分类号
O59 [应用物理学];
学科分类号
摘要
Shot noise measurements made on low-resistance magnetic tunnel junctions show results inconsistent with the resistance of the samples examined. The results yield lower than expected shot noise which is consistent with parallel path conduction (pinholes). A simple electrical model shows this should be true for noise measurements as well as for the tunneling magnetoresistance (TMR) as the resistance-area product (RxA) is reduced. The model suggests that a correlation between TMR and shot noise should exist assuming the presence of pinholes and that shot noise offers a useful experimental monitoring technique. The difficulties of making these measurements related to high frequency 1/f noise are discussed. Noise results are presented for high RxA and low RxA low-resistance samples which, in this particular case, both show the influence of pinhole shunting. (C) 2002 American Institute of Physics.
引用
收藏
页码:682 / 684
页数:3
相关论文
共 9 条
[1]  
ARAKI S, IN PRESS IEEE T MAGN
[2]   Spin dependent tunnel junctions for memory and read-head applications [J].
Freitas, PP ;
Cardoso, S ;
Sousa, R ;
Ku, WJ ;
Ferreira, R ;
Chu, V ;
Conde, JP .
IEEE TRANSACTIONS ON MAGNETICS, 2000, 36 (05) :2796-2801
[3]   Reliability of normal-state current-voltage characteristics as an indicator of tunnel-junction barrier quality [J].
Jönsson-Åkerman, BJ ;
Escudero, R ;
Leighton, C ;
Kim, S ;
Schuller, IK ;
Rabson, DA .
APPLIED PHYSICS LETTERS, 2000, 77 (12) :1870-1872
[4]   Temperature-dependent magnetoresistance of magnetic tunnel junctions with ultraviolet light-assisted oxidized barriers [J].
May, U ;
Samm, K ;
Kittur, H ;
Hauch, J ;
Calarco, R ;
Rüdiger, U ;
Güntherodt, G .
APPLIED PHYSICS LETTERS, 2001, 78 (14) :2026-2028
[5]   Electrical noise in hysteretic ferromagnet-insulator-ferromagnet tunnel junctions [J].
Nowak, ER ;
Weissman, MB ;
Parkin, SSP .
APPLIED PHYSICS LETTERS, 1999, 74 (04) :600-602
[6]  
Rüdiger U, 2001, J APPL PHYS, V89, P7573, DOI 10.1063/1.1361055
[7]   Demonstrating a tunneling magneto-resistive read head [J].
Song, D ;
Nowak, J ;
Larson, R ;
Kolbo, P ;
Chellew, R .
IEEE TRANSACTIONS ON MAGNETICS, 2000, 36 (05) :2545-2548
[8]   Micromagnetic design of spin dependent tunnel junctions for optimized sensing performance [J].
Tondra, M ;
Daughton, JM ;
Nordman, C ;
Wang, DX ;
Taylor, J .
JOURNAL OF APPLIED PHYSICS, 2000, 87 (09) :4679-4681
[9]  
VANDERZIEL A, 1986, NOISE SOLID STATE DE