Analytical ballistic theory of carbon nanotube transistors: Experimental validation, device physics, parameter extraction, and performance projection

被引:41
作者
Akinwande, Deji [1 ]
Liang, Jiale
Chong, Soogine
Nishi, Yoshio
Wong, H. -S. Philip
机构
[1] Stanford Univ, Ctr Integrated Syst, Stanford, CA 94305 USA
关键词
ballistic transport; capacitance; carbon nanotubes; energy gap; field effect transistors; nanotube devices; phonons; surface potential;
D O I
10.1063/1.3050345
中图分类号
O59 [应用物理学];
学科分类号
摘要
We developed a fully analytical ballistic theory of carbon nanotube field effect transistors enabled by the development of an analytical surface potential capturing the temperature dependence and gate and quantum capacitance electrostatics. The analytical ballistic theory is compared to the experimental results of a ballistic transistor with good agreement. The validated analytical theory enables intuitive circuit design, provides techniques for parameter extraction of the bandgap and surface potential, and elucidates on the device physics of drain optical phonon scattering and its role in reducing the linear conductance and intrinsic gain of the transistor. Furthermore, a threshold voltage definition is proposed reflecting the bandgap-diameter dependence. Projections for key analog and digital performances are discussed.
引用
收藏
页数:7
相关论文
共 31 条
[1]  
AKINWANDE D, 2008, DEV RES C IEEE NEW Y, P117
[2]   Monolithic Integration of CMOS XLSI and Carbon Nanotubes for Hybrid Nanotechnology Applications [J].
Akinwande, Deji ;
Yasuda, Shinichi ;
Paul, Bipul ;
Fujita, Shinobu ;
Close, Gael ;
Wong, H. -S. Philip .
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2008, 7 (05) :636-639
[3]   Analytical model of carbon nanotube electrostatics:Density of states, effective mass, carrier density, and quantum capacitance [J].
Akinwande, Deji ;
Nishi, Yoshio ;
Wong, H. -S. Philip .
2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2007, :753-+
[4]   An analytical derivation of the density of states, effective mass, and carrier density for achiral carbon nanotubes [J].
Akinwande, Deji ;
Nishi, Yoshio ;
Wong, H. -S. Philip .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (01) :289-297
[5]   Analysis of the frequency response of carbon nanotube transistors [J].
Akinwande, Deji ;
Close, Gael E. ;
Wong, H. -S. Philip .
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2006, 5 (05) :599-605
[6]   Carbon-based electronics [J].
Avouris, Phaedon ;
Chen, Zhihong ;
Perebeinos, Vasili .
NATURE NANOTECHNOLOGY, 2007, 2 (10) :605-615
[7]  
Balijepalli A, 2007, ISLPED'07: PROCEEDINGS OF THE 2007 INTERNATIONAL SYMPOSIUM ON LOW POWER ELECTRONICS AND DESIGN, P2, DOI 10.1145/1283780.1283783
[8]  
Cho TS, 2007, IEEE CUST INTEGR CIR, P181
[9]   A 1 GHz integrated circuit with carbon nanotube interconnects and silicon transistors [J].
Close, Gael F. ;
Yasuda, Shinichi ;
Paul, Bipul ;
Fujita, Shinobu ;
Wong, H. -S. Philip .
NANO LETTERS, 2008, 8 (02) :706-709
[10]  
Datta S., 2005, QUANTUM TRANSPORT AT