Preparation of la-doped BiFeO3 thin films with Fe2+ ions on Si substrates

被引：83

作者：

Gao, F.

Cai, C.

Wang, Y.

Dong, S.

Qiu, X. Y.

Yuan, G. L.

Liu, Z. G.

Liu, J. -M. ^{[1
]}

机构：

[1] Nanjing Univ, Solid State Microstruct Lab, Nanjing 210093, Peoples R China

[2] Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China

[3] Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110016, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2006年 / 99卷 / 09期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2195368

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

La-doped BiFeO3 thin films with Fe2+ ions have been prepared on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition in order to enhance the ferroelectric and magnetic properties. The targets for the film deposition were synthesized using a rapid liquid phase sintering technique to ensure the low leakage. The dielectric properties at room temperature and above were investigated. It was observed that the La doping greatly enhances the ferroelectric polarization at room temperature by modifying the film structure from rhombohedral to monoclinic. The saturation magnetization was enhanced about two times due to the Fe2+ ions in the thin films. (C) 2006 American Institute of Physics.

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页数：4

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