Retention properties of fully integrated (Bi,La)4Ti3O12 capacitors and their lateral size effects -: art. no. 022903

被引：37

作者：

Kim, DJ ^{[1
]}

Jo, JY

So, YW

Kang, BS

Noh, TW

Yoon, JG

Song, TK

Noh, KH

Lee, SS

Oh, SH

Lee, KN

Hong, SK

Park, YJ

机构：

[1] Seoul Natl Univ NS50, ReCOE, Seoul 151747, South Korea

[2] Seoul Natl Univ NS50, Sch Phys, Seoul 151747, South Korea

[3] Univ Suwon, Dept Phys, Gyunggi Do 445743, South Korea

[4] Changwon Natl Univ, Dept Ceram Sci & Engn, Kyungnam 641773, South Korea

[5] Hynix Semicond Inc, Memory R&D Div, Gyunggi Do 467701, South Korea

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 02期

关键词：

D O I：

10.1063/1.1843285

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the retention characteristics of (Bi,La)(4)Ti3O12 (BLT) capacitors and their lateral size effects in a fully integrated device structure. Unlike the commonly used Pb(Zr,Ti)O-3 capacitors for ferroelectric random access memories (FeRAMs), which have poor opposite-state retention characteristics, BLT capacitors showed very stable characteristics in both the same- and the opposite-state retention tests. These good retention properties were closely related to the small amount of imprint in the BLT capacitors. In addition, the retention characteristics of BLT capacitors showed no practical degradation due to the size reduction, down to 0.49x0.64 mum(2), which could be used for highly integrated FeRAMs of 32 MB density. (C) 2005 American Institute of Physics.

引用

页码：022903 / 1

页数：3

共 13 条

[1] Formation and characteristics of highly c-axis-oriented Bi3.25La0.75Ti3O12 thin films on SiO2/Si(100) and Pt/Ti/SiO2/Si(100) substrates [J].