Mechanisms for retention loss in ferroelectric Pt/Pb(Zr0.4Ti0.6)O3/Pt capacitors

被引：43

作者：

Kang, BS

Yoon, JG

Kim, DJ

Noh, TW

Song, TK

Lee, YK

Lee, JK

Park, YS

机构：

[1] Seoul Natl Univ, ReCOE, Seoul 151747, South Korea

[2] Seoul Natl Univ, Sch Phys, Seoul 151747, South Korea

[3] Changwon Natl Univ, Dept Ceram Sci & Engn, Chang Won 641773, Kyungnam, South Korea

[4] Samsung Adv Inst Technol, Suwon 440600, South Korea

[5] Univ Suwon, Dept Phys, Kyonggi Do 445743, South Korea

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 13期

关键词：

D O I：

10.1063/1.1563833

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The switching current profiles of ferroelectric Pt/Pb(Zr0.4Ti0.6)O-3/Pt capacitors were investigated after high-temperature baking to elucidate the mechanisms for retention loss. In the same-state retention, a decrease in the peak value of switching current and increase in the switching time were observed. These changes in the switching characteristics were attributed to the growth of an internal field. By comparing with the switching characteristics of a virgin capacitor and using the Merz equations, we estimated quantitatively the magnitude of the internal field. In the opposite-state retention, backswitching of polarization, triggered by the internal field, was found to be the main cause of the retention loss. (C) 2003 American Institute of Physics.

引用

页码：2124 / 2126

页数：3

共 13 条

[1] The interface screening model as origin of imprint in PbZrxTi1-xO3 thin films.: I.: Dopant, illumination, and bias dependence [J].